Oxidation Behavior of Si3N4 at Low Oxygen Partial Pressures.

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c © 2008 by John von Neumann Institute for Computing Permission to make digital or hard copies of portions of this work for personal or classroom use is granted provided that the copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise requires prior specific permission by the publisher ment...

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ژورنال

عنوان ژورنال: Journal of the Society of Materials Science, Japan

سال: 1996

ISSN: 1880-7488,0514-5163

DOI: 10.2472/jsms.45.694